IP Library Assignment 031629/0962
Patent Assignment
Reel/Frame 031629/0962

Assignment of Assignor's Interest

Recorded: 2013-11-19 Pages: 7
Assignors
PARK, SANGJINE
Executed: 2013-10-03
YOON, BOUN
Executed: 2013-10-05
HAN, JEONGNAM
Executed: 2013-10-03
KWON, KEE-SANG
Executed: 2013-10-03
CHO, BYUNG-KWON
Executed: 2013-10-05
CHOI, WONSANG
Executed: 2013-10-05
Assignee
SAMSUNG ELECTRONICS CO., LTD.
129, SAMSUNG-RO, YEONGTONG-GU, GYEONGGI-DO, SUWON-SI, KOREA, REPUBLIC OF
Covered Property (1)
Semiconductor Device Having Dual Metal Silicide Layers and Method of Manufacturing the Same
Patent: 8,889,552 →
Application: 14/083,654 →
Publication: US 2014/0248761