Patent Assignment
Reel/Frame 032236/0128
Assignment of Assignor's Interest
Recorded: 2014-02-18
Pages: 4
Assignors
LIU, PO-CHUN
Executed: 2014-02-14
CHEN, CHI-MING
Executed: 2014-02-14
CHING, MIN-CHANG
Executed: 2014-02-14
CHIANG, CHEN-HAO
Executed: 2014-02-14
YU, CHUNG-YI
Executed: 2014-02-14
HSU, CHUNG-CHIEH
Executed: 2014-02-14
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
NO. 8, LI-HSIN RD. VI, HSINCHU SCIENCE PARK, HSINCHU, 300, TAIWAN
Covered Property
(1)
High Electron Mobility Transistor (Hemt) Having an Indium-Containing Layer and Method of Manufacturing the Same