IP Library › Assignment 032515/0543
Patent Assignment
Reel/Frame 032515/0543

Assignment of Assignor's Interest

Recorded: 2014-03-25 Pages: 4
Assignors
TSAI, CHUN HSIUNG
Executed: 2014-03-17
LU, WEI-YUAN
Executed: 2014-03-17
CHAN, CHIEN-TAI
Executed: 2014-03-17
LEE, WEI-YANG
Executed: 2014-03-17
LIN, DA-WEN
Executed: 2014-03-17
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
NO. 8, LI-HSIN RD. 6, SCIENCE-BASED INDUSTRIAL PARK, HSIN-CHU, 300-77, TAIWAN
Covered Property (1)
Formation of Dislocations in Source and Drain Regions of FinFET Devices
Patent: 9,293,534 →
Application: 14/222,401 →
Publication: US 2015/0270342
Related Assignments (1)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Feb 8, 2016
From: TSAI, CHUN HSIUNG; LU, WEI-YUAN; CHAN, CHIEN-TAI; LEE, WEI-YANG
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 037685/0895 →