IP Library › Assignment 032791/0019
Patent Assignment
Reel/Frame 032791/0019

Assignment of Assignor's Interest

Recorded: 2014-04-30 Pages: 5
Assignors
OH, SECHUNG
Executed: 2014-02-27
LEE, JOONMYOUNG
Executed: 2014-02-27
Assignee
SAMSUNG ELECTRONICS CO., LTD.
129 SAMSUNG-RO, YEONGTONG-GU, SUWON-SI, GYEONGGI-DO, 443-742, KOREA, REPUBLIC OF
Covered Property (1)
Magnetic Tunnel Junction Memory Devices Including Crystallized Boron-Including First Magnetic Layer on a Tunnel Barrier Layer and Lower Boron-Content Second Magnetic Layer on the First Magnetic Layer
Patent: 9,842,987 →
Application: 14/265,697 →
Publication: US 2014/0353783