Patent Assignment
Reel/Frame 033247/0243
Corrective Assignment to Correct the Assignee Previously Recorded at Reel: 030304 Frame: 0306. Assignor(S) Hereby Confirms the Assignment.
Recorded: 2014-06-27
Pages: 7
Assignors
NIEBOJEWSKI, HEIMANU
Executed: 2012-11-13
MORAND, YVES
Executed: 2012-11-13
LE ROYER, CYRILLE
Executed: 2012-11-13
NEMOUCHI, FABRICE
Executed: 2012-11-13
Assignees
STMICROELECTRONICS S.A.
29, BOULEVARD ROMAIN ROLLAND, MONTROUGE, 92120, FRANCE
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
BATIMENT LE PONANT D, 25 RUE LEBLANC, PARIS, 75015, FRANCE
Covered Property
(1)
Method for Forming Gate, Source, and Drain Contacts on a Mos Transistor
Related Assignments
(2)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest
Apr 29, 2013
From: NIEBOJEWSKI, HEIMANU; MORAND, YVES; LE ROYER, CYRILLE; NEMOUCHI, FABRICE
To: STMICROELECTRONICS S.A.; COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX EERGIES ALTERNATIVES
Reel/Frame 030304/0306 →
Change of Name
Jan 21, 2024
From: STMICROELECTRONICS SA
To: STMICROELECTRONICS FRANCE
Reel/Frame 066357/0693 →