IP Library Assignment 033627/0513
Patent Assignment
Reel/Frame 033627/0513

Assignment of Assignor's Interest

Recorded: 2014-08-28 Pages: 8
Assignors
LIN, PO-KEN
Executed: 2014-08-27
WU, CHANG-MING
Executed: 2014-08-27
HSU, CHERN-YOW
Executed: 2014-08-27
LIU, SHIH-CHANG
Executed: 2014-08-27
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
NO. 8, LI-HSIN RD. 6, HSIN-CHU SCIENCE PARK, HSIN-CHU, 300-77, TAIWAN
Covered Property (1)
Phase Change Memory Structure to Reduce Leakage from the Heating Element to the Surrounding Material
Patent: 9,660,188 →
Application: 14/471,082 →
Publication: US 2016/0064656