Patent Assignment
Reel/Frame 033836/0612
Assignment of Assignor's Interest
Recorded: 2014-09-29
Pages: 7
Assignors
KIM, JINBUM
Executed: 2014-08-28
JEONG, SEONG HOON
Executed: 2014-08-28
LEE, JEON IL
Executed: 2014-09-02
KIM, SEOKHOON
Executed: 2014-09-02
LEE, KWAN HEUM
Executed: 2014-08-30
LEE, CHOEUN
Executed: 2014-08-28
PYO, YU-JIN
Executed: 2014-08-28
Assignee
SAMSUNG ELECTRONICS CO., LTD
129, SAMSUNG-RO, YEONGTONG-GU, SUWON-SI, GYEONGGI-DO, 443-742, KOREA, REPUBLIC OF
Covered Property
(1)
Methods of Selectively Growing Source/Drain Regions of Fin Field Effect Transistor and Method of Manufacturing Semiconductor Device Including a Fin Field Effect Transistor