IP Library Assignment 033878/0856
Patent Assignment
Reel/Frame 033878/0856

Assignment of Assignor's Interest

Recorded: 2014-10-03 Pages: 3
Assignors
HEE, ENG GEK
Executed: 2014-06-11
WISLEY UNG, KA SIONG
Executed: 2014-06-11
Assignee
X-FAB SEMICONDUCTOR FOUNDRIES AG
HAARBERGSTRASSE 67, ERFURT, 99097, GERMANY
Covered Property (1)
Method of Fabricating a Tunnel Oxide Layer and a Tunnel Oxide Layer for a Semiconductor Device
Patent: 9,627,213 →
Application: 14/390,431 →
Publication: US 2015/0108559
Related Assignments (1)
Other recorded transfers of the patent in this record — the chain of ownership.
Change of Name Apr 22, 2019
From: X-FAB SEMICONDUCTOR FOUNDRIES AG
To: X-FAB SEMICONDUCTOR FOUNDRIES GMBH
Reel/Frame 048956/0454 →