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Patent Assignment
Reel/Frame 033888/0904

Assignment of Assignor's Interest

Recorded: 2014-10-06 Pages: 2
Assignor
HSIEH, FU-YUAN
Executed: 2014-10-06
Assignee
FORCE MOS TECHNOLOGY CO., LTD
13F, NO. 123-11, XINGDE RD. SAN CHONG DIST.,, NEW TAIPEI CITY, 24158, TAIWAN
Covered Property (1)
Trench Moseft with Trench Gates Underneath Contact Areas of Esd Diode for Prevention of Gate and Source Shortage
Patent: 7,956,410 →
Application: 12/785,085 →
Publication: US 2010/0224931