Patent Assignment
Reel/Frame 034362/0872
Assignment of Assignor's Interest
Recorded: 2014-12-03
Pages: 2
Assignor
ZHAO, JIE
Executed: 2014-11-26
Assignee
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
18 ZHANGJIANG ROAD, PUDONG NEW AREA, SHANGHAI, 201203, CHINA
Covered Property
(1)
Method for Manufacturing Cmos Device with High-K Dielectric Layers and High-K Cap Layers Formed in Different Steps