Assignment of Assignor's Interest

Recorded: 2015-01-30 Pages: 3

Assignor

MOCHIZUKI, SHOGO

Executed: 2015-01-13

Assignee

RENESAS ELECTRONICS CORPORATION

1753, SHIMONUMABE, NAKAHARA-KU, KAWASAKI-SHI, KANAGAWA, 211-8668, JAPAN

Covered Property (1)

Method of Forming Epitaxial Buffer Layer for Finfet Source and Drain Junction Leakage Reduction

Patent: 9,390,976 →

Application: 14/610,653 →

Publication: US 2015/0318211

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.