IP Library Assignment 035206/0226
Patent Assignment
Reel/Frame 035206/0226

Assignment of Assignor's Interest

Recorded: 2015-03-19 Pages: 10
Assignors
BAE, DONG-IL
Executed: 2014-10-29
KIM, BOMSOO
Executed: 2014-10-29
CHO, YONG-MIN
Executed: 2014-10-29
Assignee
SAMSUNG ELECTRONICS CO., LTD.
129, SAMSUNG-RO, YEONGTONG-GU,, SUWON-SI, GYEONGGI-DO, 443-742, KOREA, REPUBLIC OF
Covered Property (1)
Semiconductor Device Having Gate Electrode with Spacers on Fin Structure and Silicide Layer Filling the Recess
Patent: 9,525,036 →
Application: 14/662,697 →
Publication: US 2016/0276449