Patent Assignment
Reel/Frame 035649/0417
Assignment of Assignor's Interest
Recorded: 2015-05-15
Pages: 4
Assignee
TOYOTA JIDOSHA KABUSHIKI KAISHA
1, TOYOTA-CHO, TOYOTA-SHI, AICHI-KEN, 4718571, JAPAN
Covered Property
(1)
Semiconductor Device in Which an Insulated- Gate Bipolar Transistor ( Igbt) Region and a Diode Region Are Formed on One Semiconductor Substrate
Related Assignments
(1)
Other recorded transfers of the patent in this record — the chain of ownership.