Patent Assignment
Reel/Frame 036034/0230
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded: 2015-06-29
Received: 2015-06-29
Pages: 153
Assignor
SPANSION, LLC
Executed: 2015-06-01
Assignee
CYPRESS SEMICONDUCTOR CORPORATION
198 CHAMPION COURT, SAN JOSE, CA, 95134, UNITED STATES
Covered Applications
(28)
SIMULTANEOUS FORMATION OF CHARGE STORAGE AND BITLINE TO WORDLINE ISOLATION
App. No. 10/223,195
→
SYSTEM AND METHOD TO FACILITATE STABILIZATION OF REFERENCE VOLTAGE SIGNALS IN MEMORY DEVICES
App. No. 10/223,486
→
2BIT/CELL ARCHITECTURE FOR FLOATING GATE FLASH MEMORY PRODUCT AND ASSOCIATED METHOD
App. No. 10/180,673
→
CHARGE GAIN/CHARGE LOSS JUNCTION LEAKAGE PREVENTION FOR FLASH TECHNOLOGY BY USING DOUBLE ISOLATION/CAPPING LAYER BETWEEN LIGHTLY DOPED DRAIN AND GATE
App. No. 10/180,772
→
NOVEL CAPPING LAYER
App. No. 10/179,061
→
INNOVATIVE NARROW GATE FORMATION FOR FLOATING GATE FLASH TECHNOLOGY
App. No. 10/178,106
→
HIGHER PROGRAM VT AND FASTER PROGRAMMING RATES BASED ON IMPROVED ERASE METHODS
App. No. 10/173,262
→
NON-VOLATILE MEMORY DIELECTRIC AS CHARGE PUMP DIELECTRIC
App. No. 10/147,622
→
SYSTEM FOR READING A DOUBLE-BIT MEMORY CELL
App. No. 10/143,449
→
PROGRAMMING WITH FLOATING SOURCE FOR LOW POWER, LOW LEAKAGE AND HIGH DENSITY FLASH MEMORY DEVICES
App. No. 10/126,330
→
NOVEL METHOD TO DISTINGUISH AN STI OUTER EDGE CURRENT COMPONENT WITH AN STI NORMAL CURRENT COMPONENT
App. No. 10/126,363
→
A TEST STRUCTURE APPARATUS FOR MEASURING STANDBY CURRENT IN FLASH MEMORY DEVICES
App. No. 10/112,976
→
OPERATIONAL AMPLIFIER HAVING OFFSET CANCEL FUNCTION
App. No. 10/102,722
→
MEMORY DEVICE HAVING IMPROVED PROGRAMMABILITY
App. No. 10/103,077
→
SEMICONDUCTOR MEMORY AND ITS USAGE
App. No. 10/097,924
→
PLANARIZATION OF A POLYSILICON LAYER SURFACE BY CHEMICAL MECHANICAL POLISH TO IMPROVE LITHOGRAPHY AND SILICIDE FORMATION
App. No. 10/067,765
→
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
App. No. 10/061,156
→
METHOD AND DEVICE FOR READING DUAL BIT MEMORY CELLS USING MULTIPLE REFERENCE CELLS WITH TWO SIDE READ
App. No. 10/052,484
→
CHARGE INJECTION
App. No. 10/050,483
→
SHALLOW TRENCH ISOLATION SPACER FOR WEFF IMPROVEMENT
App. No. 10/032,630
→
DIE SEAL FOR SEMICONDUCTOR DEVICE MOISTURE PROTECTION
App. No. 09/998,624
→
SALICIDED GATE FOR VIRTUAL GROUND ARRAYS
App. No. 09/968,465
→
NON-VOLATILE SEMICONDUCTOR MEMORY AND ITS DRIVING METHOD
App. No. 09/927,387
→
OXIDE/NITRIDE OR OXIDE/NITRIDE/OXIDE THICKNESS MEASUREMENT USING SCATTEROMETRY
App. No. 09/904,089
→
METHOD OF FORMING ZERO MARKS
App. No. 09/884,204
→
PROCESS FOR MAKING A DUAL BIT MEMORY DEVICE WITH ISOLATED POLYSILICON FLOATING GATES
App. No. 09/810,155
→
PIGGYBACK PROGRAMMING USING VOLTAGE CONTROL FOR MULTI-LEVEL CELL FLASH MEMORY DESIGNS
App. No. 09/779,821
→
PIGGYBACK PROGRAMMING USING AN EXTENDED FIRST PULSE FOR MULTI-LEVEL CELL FLASH MEMORY DESIGNS
App. No. 09/779,794
→