Patent Assignment
Reel/Frame 036081/0786
Assignment of Assignor's Interest
Recorded: 2015-07-14
Pages: 5
Assignors
CHANG, CHE-CHENG
Executed: 2015-06-29
LIN, JR-JUNG
Executed: 2015-06-29
CHEN, SHIH-HAO
Executed: 2015-06-29
LIN, CHIH-HAN
Executed: 2015-06-29
LIN, MU-TSANG
Executed: 2015-07-07
CHANG, YUNG JUNG
Executed: 2015-07-09
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
NO. 8, LI-HSIN ROAD 6, SCIENCE-BASED INDUSTRIAL PARK, HSIN-CHU, 300-77, TAIWAN
Covered Property
(1)
Method and Structure for FinFET Comprising Patterned Oxide and Dielectric Layer under Spacer Features