IP Library › Assignment 036530/0306
Patent Assignment
Reel/Frame 036530/0306

Assignment of Assignor's Interest

Recorded: 2015-09-10 Pages: 9
Assignor
HITACHI METALS, LTD.
Executed: 2015-07-13
Assignee
SCIOCS COMPANY LIMITED
800 ISAGOZAWA-CHO, HITACHI-SHI, IBARAKI-KEN, JAPAN
Covered Properties (2)
Semiconductor Substrate Made of Group Iii Nitride, and Process for Manufacture Thereof
Patent: 6,924,159 →
Application: 10/105,404 →
Publication: US 2002/0197825
Group Iii Nitride Semiconductor Substrate and Its Manufacturing Method
Patent: 7,189,588 →
Application: 10/519,571 →
Publication: US 2006/0046325
Related Assignments (6)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Jul 19, 2002
From: USUI, AKIRA; SHIBATA, MASATOMO; OSHIMA, YUICHI
To: NEC CORPORATION; HITACHI CABLE, LTD.
Reel/Frame 013108/0550 →
Assignment of Assignor's Interest Dec 30, 2004
From: USUI, AKIRA; SHIBATA, MASATOMO; OSHIMA, YUICHI
To: NEC CORPORATION; HITACHI CABLE, LTD.
Reel/Frame 017179/0266 →
Assignment of Assignor's Interest Jan 14, 2015
From: NEC CORPORATION
To: HITACHI METALS, LTD.
Reel/Frame 034704/0300 →
Merger Jan 14, 2015
From: HITACHI CABLE, LTD.
To: HITACHI METALS, LTD.
Reel/Frame 034757/0313 →
Assignment of Assignor's Interest Mar 10, 2016
From: NEC CORPORATION
To: SCIOCS COMPANY LIMITED
Reel/Frame 037946/0446 →
Assignment of Assignor's Interest Mar 10, 2016
From: SCIOCS COMPANY LIMITED
To: SUMITOMO CHEMICAL COMPANY, LIMITED
Reel/Frame 037946/0805 →