IP Library › Assignment 036930/0501
Patent Assignment
Reel/Frame 036930/0501

Assignment of Assignor's Interest

Recorded: 2015-11-01 Pages: 4
Assignors
PARK, JONGCHUL
Executed: 2015-08-31
KWON, HYUNGJOON
Executed: 2015-08-31
Assignee
SAMSUNG ELECTRONICS CO., LTD.
129, SAMSUNG-RO, YEONGTONG-GU, SUWON-SI, GYEONGGI-DO, 443-742, KOREA, REPUBLIC OF
Covered Property (1)
Method of Forming a Pattern Using Ion Beams of Bilateral Symmetry, a Method of Forming a Magnetic Memory Device Using the Same, and an Ion Beam Apparatus Generating Ion Beams of Bilateral Symmetry
Patent: 9,627,610 →
Application: 14/919,723 →
Publication: US 2016/0149123