Patent Assignment
Reel/Frame 037958/0728
Assignment of Assignor's Interest
Recorded: 2016-02-29
Pages: 12
Assignor
GRANDIS, INC.
Executed: 2016-02-24
Assignee
SAMSUNG SEMICONDUCTOR INC.
3655 NORTH FIRST STREET, SAN JOSE, CALIFORNIA, 95134
Covered Properties
(84)
Magnetic Element Utilizing Spin Transfer and an Mram Device Using the Magnetic Element
Off-Axis Pinned Layer Magnetic Element Utilizing Spin Transfer and an Mram Device Using the Magnetic Element
Patent:
6,888,742 →
Application:
10/231,430 →
Thermally Stable Magnetic Elements Utilizing Spin Transfer and an Mram Device Using the Magnetic Element
Magnetic Element Utilizing Spin-Transfer and Half-Metals and an Mram Device Using the Magnetic Element
Patent:
6,958,927 →
Application:
10/269,011 →
Spin-Transfer Multilayer Stack Containing Magnetic Layers with Resettable Magnetization
Magnetostatically Coupled Magnetic Elements Utilizing Spin Transfer and an Mram Device Using the Magnetic Element
Magnetostatically Coupled Magnetic Elements Utilizing Spin Transfer and an Mram Device Using the Magnetic Element
Methos for Providing a Sub .15 Micron Magnetic Memory Structure
Magnetic Memory Element Utilizing Spin Transfer Switching and Storing Multiple Bits
Current Confined Pass Layer for Magnetic Elements Utilizing Spin-Transfer and an Mram Device Using Such Magnetic Elements
Three-Terminal Magnetostatically Coupled Spin Transfer-Based Mram Cell
Patent:
7,009,877 →
Application:
10/714,073 →
Stress Assisted Current Driven Switching for Magnetic Memory Applications
Magnetic Element Utilizing Spin Transfer and an Mram Device Using the Magnetic Element
Method and System for Providing Heat Assisted Switching of a Magnetic Element Utilizing Spin Transfer
Spin Transfer Magnetic Element Having Low Saturation Magnetization Free Layers
Perpendicular Magnetization Magnetic Element Utilizing Spin Transfer
Spin Transfer Magnetic Element with Free Layers Having High Perpendicular Anisotropy and in-Plane Equilibrium Magnetization
Spin Transfer Magnetic Elements with Spin Depolarization Layers
Magnetoresistive Element Having Reduced Spin Transfer Induced Noise
Spin Barrier Enhanced Dual Magnetoresistance Effect Element and Magnetic Memory Using the Same
Spin Barrier Enhanced Magnetoresistance Effect Element and Magnetic Memory Using the Same
Re-Configurable Logic Elements Using Heat Assisted Magnetic Tunneling Elements
Magnetic Elements with Spin Engineered Insertion Layers and Mram Devices Using the Magnetic Elements
Spin Scattering and Heat Assisted Switching of a Magnetic Element
Mtj Elements with High Spin Polarization Layers Configured for Spin-Transfer Switching and Spintronics Devices Using the Magnetic Elements
Circuitry for Use in Current Switching a Magnetic Cell
Magnetic Element Utilizing Spin Transfer and an Mram Device Using the Magnetic Element
Fast Magnetic Memory Devices Utilizing Spin Transfer and Magnetic Elements Used Therein
Magnetic Elements Having a Bias Field and Magnetic Memory Devices Using the Magnetic Elements
Magnetic Tunnel Junction Having Diffusion Stop Layer
Magnetic Devices Having a Hard Bias Field and Magnetic Memory Devices Using the Magnetic Devices
Patent:
7,230,845 →
Application:
11/192,811 →
Spin-Transfer Switching Magnetic Elements Using Ferrimagnets and Magnetic Memories Using the Magnetic Elements
Current Driven Switching of Magnetic Storage Cells Utilizing Spin Transfer and Magnetic Memories Using Such Cells
Patent:
7,272,034 →
Application:
11/217,258 →
Current Driven Switching of Magnetic Storage Cells Utilizing Spin Transfer and Magnetic Memories Using Such Cells
Patent:
7,272,035 →
Application:
11/217,524 →
Magnetic Device Having Stabilized Free Ferromagnetic Layer
Spin Transfer Magnetic Element with Free Layers Having High Perpendicular Anisotropy and in-Plane Equilibrium Magnetization
Magnetic Element Utilizing Spin-Transfer and Half-Metals and an Mram Device Using the Magnetic Element
Patent:
7,227,773 →
Application:
11/256,387 →
Current Driven Switched Magnetic Storage Cells Having Improved Read and Write Margins and Magnetic Memories Using Such Cells
Oscillating-Field Assisted Spin Torque Switching of a Magnetic Tunnel Junction Memory Element
Method and System for Providing Current Balanced Writing for Memory Cells and Magnetic Devices
Patent:
7,187,577 →
Application:
11/286,083 →
Current-Switched Spin-Transfer Magnetic Devices with Reduced Spin-Transfer Switching Current Density
Current Driven Memory Cells Having Enhanced Current and Enhanced Current Symmetry
Magnetic Elements with Ballistic Magnetoresistance Utilizing Spin-Transfer and an Mram Device Using Such Magnetic Elements
Magnetic Element Utilizing Free Layer Engineering
Patent:
7,760,474 →
Application:
11/487,552 →
Magnetic Device Having Multilayered Free Ferromagnetic Layer
Devices and Circuits Based on Magnetic Tunnel Junctions Utilizing a Multilayer Barrier
Spin Transfer Magnetic Element Having Low Saturation Magnetization Free Layers
Method and System for Providing Domain Wall Assisted Switching of Magnetic Elements and Magnetic Memories Using Such Magnetic Elements
Patent:
7,486,551 →
Application:
11/695,614 →
Magnetic Elements with Spin Engineered Insertion Layers and Mram Devices Using the Magnetic Elements
Method and System for Providing a Spin Transfer Device with Improved Switching Characteristics
Method and System for Providing Spin Transfer Tunneling Magnetic Memories Utilizing Non-Planar Transistors
Magnetic Shielding in Magnetic Multilayer Structures
Spin Transfer Magnetic Element with Free Layers Having High Perpendicular Anisotropy and in-Plan Equilibrium Magnetization
Programmable and Redundant Circuitry Based on Magnetic Tunnel Junction (Mtj)
Method and System for Providing Magnetic Elements Having Enhanced Magnetic Anisotropy and Memories Using Such Magnetic Elements
Current Driven Memory Cells Having Enhanced Current and Enhanced Current Symmetry
Magnetic Devices Having Oxide Antiferromagnetic Layer Next to Free Ferromagnetic Layer
Method and System for Providing Magnetic Tunneling Junction Elements Having Improved Performance Through Capping Layer Induced Perpendicular Anisotropy and Memories Using Such Magnetic Elements
Dynamic Multistate Memory Write Driver
Patent:
8,077,508 →
Application:
12/544,189 →
Differential Read and Write Architecture
Magnetic Element Having Perpendicular Anisotropy with Enhanced Efficiency
Method and System for Providing a Hierarchical Data Path for Spin Transfer Torque Random Access Memory
Method and System for Providing Dual Magnetic Tunneling Junctions Usable in Spin Transfer Torque Magnetic Memories
Method and System for Providing a Magnetic Field Aligned Spin Transfer Torque Random Access Memory
Magnetic Element Utilizing Free Layer Engineering
Method and System for Providing Magnetic Tunneling Junction Elements Having a Biaxial Anisotropy
Probabilistic Switching Determination for Electrical Devices
Patent:
8,825,442 →
Application:
12/888,257 →
Pseudo Page Mode Memory Architecture and Method
Magnetic junction elements having an easy cone anisotropy and a magnetic memory using such magnetic junction elements
Stator Connector
Three Terminal Magnetic Element
Patent:
8,406,045 →
Application:
13/009,818 →
Non-Volatile Static Ram Cell Circuit and Timing Method
Method and System for Providing Magnetic Layers Having Insertion Layers for Use in Spin Transfer Torque Memories
Memory Write Error Correction Circuit
Method and System for Providing Multiple Logic Cells in a Single Stack
Method and System for Providing Dual Magnetic Tunneling Junctions Usable in Spin Transfer Torque Magnetic Memories
Method and System for Providing Magnetic Tunneling Junction Elements Having Improved Performance Through Capping Layer Induced Perpendicular Anisotropy and Memories Using Such Magnetic Elements
Method and System for Providing Inverted Dual Magnetic Tunneling Junction Elements
Multi-Cell Per Memory-Bit Circuit and Method
Method and System for Providing Spin Transfer Based Logic Devices
Magnetic Shielding in Magnetic Multilayer Structures
Multi-Supply Symmetric Driver Circuit and Timing Method
Magnetic Element Having Perpendicular Anisotropy With Enhanced Efficiency
Parallel Memory Error Detection and Correction
Related Assignments
(16)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Aug 6, 2002
From: HUAI, YIMING; NGUYEN, PAUL P.
To: GRANDIS, INC.
Reel/Frame 013188/0178 →
Assignment of Assignor's Interest
Sep 27, 2002
From: HUAI, YIMING; NGUYEN, PAUL P.
To: GRANDIS, INC.
Reel/Frame 013351/0036 →
Assignment of Assignor's Interest
Oct 9, 2002
From: NGUYEN, PAUL P; HUAI, YIMING
To: GRANDIS INC.
Reel/Frame 013391/0068 →
Assignment of Assignor's Interest
Jan 7, 2003
From: NGUYEN, PAUL P.; HUAI, YIMING
To: GRANDIS INC.
Reel/Frame 013652/0410 →
Assignment of Assignor's Interest
Jan 10, 2003
From: HUAI, YIMING; ALBERT, FRANK; NGUYEN, PAUL
To: GRANDIS, INC.
Reel/Frame 013668/0221 →
Assignment of Assignor's Interest
Feb 28, 2003
From: ALBERT, FRANK; HUAI, YIMING; NGUYEN, PAUL P.
To: GRANDIS, INC.
Reel/Frame 013836/0966 →
Assignment of Assignor's Interest
May 21, 2003
From: ALBERT, FRANK; HUAI, YIMING; NGUYEN, PAUL P.
To: GRANDIS, INC.
Reel/Frame 014114/0670 →
Assignment of Assignor's Interest
Aug 26, 2003
From: NGUYEN, PAUL P.; HUAI, YIMING
To: GRANDIS, INC.
Reel/Frame 014443/0287 →
Assignment of Assignor's Interest
Sep 19, 2003
From: HUAI, YIMING; NGUYEN, PAUL P.; ALBERT, FRANK
To: GRANDIS, INC.
Reel/Frame 014551/0601 →
Assignment of Assignor's Interest
Nov 14, 2003
From: PAKALA, MAHENDRA; HUAI, YIMING
To: GRANDIS, INC.
Reel/Frame 014710/0950 →
Assignment of Assignor's Interest
Feb 13, 2004
From: HUAI, YIMING; PAKALA, MAHENDRA
To: GRANDIS, INC.
Reel/Frame 014998/0266 →
Assignment of Assignor's Interest
Feb 19, 2004
From: NGUYEN, PAUL P.; HUAI, YIMING; DIAO, ZHITAO; ALBERT, FRANK
To: GRANDIS, INC.
Reel/Frame 015012/0907 →
Assignment of Assignor's Interest
Feb 25, 2004
From: HUAI, YIMING
To: GRANDIS, INC.
Reel/Frame 015032/0437 →
Assignment of Assignor's Interest
Feb 26, 2004
From: NYGEN, PAUL P.; HUAI, YIMING
To: GRANDIS, INC.
Reel/Frame 015037/0190 →
Assignment of Assignor's Interest
Apr 21, 2004
From: HUAI, YIMING; NGUYEN, PAUL P.
To: GRANDIS, INC.
Reel/Frame 015252/0135 →
Assignment of Assignor's Interest
Oct 5, 2005
From: HUAI, YIMING; NGUYEN, PAUL P.; ALBERT, FRANK
To: GRANDIS, INC.
Reel/Frame 016853/0298 →