Patent Assignment
Reel/Frame 038205/0252
Assignment of Assignor's Interest
Recorded: 2016-04-06
Pages: 3
Assignee
HITACHI METALS, LTD,
2-70, KONAN 1-CHOME, MINATO-KU, TOKYO, 108-8224, JAPAN
Covered Property
(1)
Single-Crystal Silicon Carbide Substrate, Method for Producing Single-Crystal Silicon Carbide Substrate, and Method for Inspecting Single-Crystal Silicon Carbide Substrate