IP Library Assignment 038530/0068
Patent Assignment
Reel/Frame 038530/0068

Assignment of Assignor's Interest

Recorded: 2016-05-10 Pages: 6
Assignors
SENGUPTA, RWIK
Executed: 2016-05-09
RODDER, MARK STEPHEN
Executed: 2016-05-07
HONG, JOON GOO
Executed: 2016-05-08
RAKSHIT, TITASH
Executed: 2016-05-07
Assignee
SAMSUNG ELECTRONICS CO., LTD.
129, SAMSUNG-RO, YEONGTONG-GU, SUWON-SI, GYEONGGI-DO, 16677, KOREA, REPUBLIC OF
Covered Property (1)
Gate-All-Around Field Effect Transistors with Horizontal Nanosheet Conductive Channel Structures for Mol/Inter-Channel Spacing and Related Cell Architectures
Patent: 9,685,564 →
Application: 15/149,722 →
Publication: US 2017/0110595