IP Library Assignment 039062/0582
Patent Assignment
Reel/Frame 039062/0582

Assignment of Assignor's Interest

Recorded: 2016-07-01 Pages: 6
Assignors
REBOH, SHAY
Executed: 2016-06-01
BATUDE, PERRINE
Executed: 2016-06-01
MAZEN, FREDERIC
Executed: 2016-06-01
SKLENARD, BENOIT
Executed: 2016-06-01
Assignee
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
25 RUE LEBLANC, BATIMENT "LE PONANT D", PARIS, 75015, FRANCE
Covered Property (1)
Method for Doping Source and Drain Regions of a Transistor by Means of Selective Amorphisation
Patent: 9,966,453 →
Application: 15/092,002 →
Publication: US 2016/0300927