Patent Assignment
Reel/Frame 039667/0505
Assignment of Assignor's Interest
Recorded: 2016-08-12
Pages: 28
Assignors
PALACIOS, TOMAS, DR.
Executed: 2016-08-11
LU, BIN, DR.
Executed: 2013-04-01
XIA, LING, DR.
Executed: 2013-10-07
AZIZE, MOHAMED, DR.
Executed: 2013-10-01
SAADAT, OMAIR, DR.
Executed: 2014-10-06
Assignee
CAMBRIDGE ELECTRONICS, INC.
ONE BROADWAY, 14TH FLOOR, CAMBRIDGE, MASSACHUSETTS, 02142
Covered Properties
(12)
Field-Plate Structures for Semiconductor Devices
PCT:
PCT/US2016/042831 ↗
Semiconductor Structure with a Spacer Layer
PCT:
PCT/US2016/046546 ↗
Semiconductor Structure and Etch Technique for Monolithic Integration of Iii-N Transistors
Field-Plate Structures for Semiconductor Devices
Semiconductor Structure with a Spacer Layer
III-Nitride Integration Technology
Application:
62/146,055 →
Metal plate structures for III-Nitride Transistors
Application:
62/193,618 →
Novel metal structure for semiconductor device
Application:
62/193,835 →
Novel III-Nitride structure with spacer layer
Application:
62/203,438 →
Field-plate Structure Having Several Electrodes
Application:
62/219,954 →
III-Nitride Semiconductors with Recess Regions
Application:
62/298,824 →
Hybrid structure with seperate controls
Application:
62/304,032 →
Related Assignments
(3)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Apr 29, 2016
From: XIA, LING; AZIZE, MOHAMED; LU, BIN
To: CAMBRIDGE ELECTRONICS, INC.
Reel/Frame 038423/0929 →
Assignment of Assignor's Interest
Jul 20, 2016
From: XIA, LING; AZIZE, MOHAMED; LU, BIN
To: CAMBRIDGE ELECTRONICS, INC.
Reel/Frame 039198/0488 →
Change of Name
Jul 7, 2022
From: CAMBRIDGE ELECTRONICS, INC.
To: FINWAVE SEMICONDUCTOR, INC.
Reel/Frame 060612/0276 →