Patent Assignment
Reel/Frame 039970/0012
Assignment of Assignor's Interest
Recorded: 2016-10-08
Pages: 3
Assignor
FUJITA, KOICHI
Executed: 2016-08-19
Assignee
MITSUBISHI ELECTRIC CORPORATION
7-3, MARUNOUCHI 2-CHOME, CHIYODA-KU, TOKYO, 100-8310, JAPAN
Covered Property
(1)
Semiconductor Device with Reduced Parasitic Drain-Gate Capacitance and Method of Manufacturing the Same