IP Library › Assignment 040955/0918
Patent Assignment
Reel/Frame 040955/0918

Assignment of Assignor's Interest

Recorded: 2017-01-12 Pages: 2
Assignors
NAKANISHI, SHO
Executed: 2016-09-08
FUJII, YUJI
Executed: 2016-09-10
Assignee
RENESAS ELECTRONICS CORPORATION
2-24, TOYOSU 3-CHOME, KOUTOU-KU, TOKYO, 135-0061, JAPAN
Covered Property (1)
Semiconductor Device Structure for Insulated Gate Bipolar Transistor
Application: 15/404,509 →
Publication: US 2017/0207331