Patent Assignment
Reel/Frame 041627/0379
Assignment of Assignor's Interest
Recorded: 2017-02-05
Pages: 2
Assignors
DI, ZENGFENG
Executed: 2015-02-08
ZHENG, XIAOHU
Executed: 2015-02-04
WANG, GANG
Executed: 2015-02-04
ZHANG, MIAO
Executed: 2015-02-04
WANG, XI
Executed: 2015-02-06
Assignee
SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES
NO.865, CHANGNING ROAD, CHANGNING DISTRICT,, SHANGHAI, 200050, CHINA
Covered Property
(1)
Manufacturing Method of Graphene Modulated High-K Oxide and Metal Gate Mos Device