Patent Assignment
Reel/Frame 042122/0855
Assignment of Assignor's Interest
Recorded: 2017-04-24
Pages: 4
Assignor
LI, YONG
Executed: 2017-04-12
Assignees
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
18 ZHANGJIANG ROAD, PUDONG NEW AREA, SHANGHAI, 201203, CHINA
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
NO.18, WEN CHANG RD., ECONOMIC-TECHNOLOGICAL DEVELOPMENT AREA, DAXING DISTRICT, BEIJING, 100716, CHINA
Covered Property
(1)
Semiconductor Device with High-K Gate Dielectric Layer and Fabrication Method Thereof