Patent Assignment
Reel/Frame 043668/0512
Assignment of Assignor's Interest
Recorded: 2017-08-24
Received: 2017-08-24
Pages: 7
Assignor
MITSUBISHI DENKI KABUSHIKI KAISHA
Executed: 2017-06-27
Assignee
RENESAS ELECTRONICS CORPORATION
2-24, TOYOSU 3-CHOME, KOUTOU-KU, TOKYO, JPX, 135-0061, JAPAN
Covered Properties
(17)
Spike Current Reducing Circuit
Application:
10/160,238 →
Semiconductor Memory Device
Application:
09/988,173 →
Semiconductor Memory Device Capable of Reducing Leakage Current Flowing into Substrate
Application:
09/987,277 →
A Semiconductor Device with a Well Wherein a Scaling Down of the Layout Is Achieved
Application:
09/961,190 →
Semiconductor Memory Device with Internal Power Supply Potential Genaration Circuit
Application:
09/827,897 →
Semiconductor Device Including a Fuse Circuit in Which the Electric Current Is Cut Off After Blowing So as to Prevent Voltage Fall
Application:
09/820,853 →
Circuit for Amplifying and Outputting Audio Signals
Application:
09/810,505 →
Read Amplifier Circuit for High-Speed Reading and Semiconductor Memory Device Employing the Read Amplifier Circuit
Application:
09/791,772 →
Semiconductor Integrated Circuit Device Capable of Ensuring Reliability of Transistor Driving High Voltage
Application:
09/778,261 →
Semiconductor Memory Device Having Reduced Current Consumption at Internal Boosted Potential
Application:
09/773,621 →
Mold for Resin-Sealing of Semiconductor Devices
Application:
09/770,666 →
Voltage Downconverter Circuit Capable of Reducing Current Consumption While Keeping Response Rate
Application:
09/764,129 →
Internal Voltage Generation Circuit
Application:
09/760,639 →
Semiconductor Device with Extra Control Wiring for Improving Breakdown Voltage.
Application:
09/760,800 →
Semiconductor Merged Logic and Memory Capable of Preventing an Increase in an Abnormal Current During Power-Up
Application:
09/759,315 →
Semiconductor Integrated Circuit Device Capable of Stably Generating Internal Voltage Independent of an External Power Supply Voltage
Application:
09/759,321 →
Semiconductor memory device with readily changeable memory capacity
Application:
09/754,121 →