IP Library › Assignment 044183/0396
Patent Assignment
Reel/Frame 044183/0396

Confirmatory License

Recorded: 2017-10-11 Pages: 2
Assignor
Assignee
NATIONAL SCIENCE FOUNDATION
4201 WILSON BLVD, ROOM 1265, ARLINGTON, VIRGINIA, 22230
Covered Property (1)
Normally-Off Cubic Phase GaN (c-GaN) HEMT having a Gate Electrode Dielectrically Insulated from a c-AlGaN Capping Layer
Application: 15/703,850 →
Publication: US 2018/0083133
Related Assignments (1)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Sep 14, 2017
From: BAYRAM, CAN; GRADY, RYAN WILLIAM; PARK, KIHOON
To: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
Reel/Frame 043585/0207 →