Patent Assignment
Reel/Frame 044297/0125
Assignment of Assignor's Interest
Recorded: 2017-12-05
Pages: 4
Assignors
WU, CHUNG-SHU
Executed: 2017-11-13
HSU, YING-YA
Executed: 2017-11-13
JANG, SHU-UEI
Executed: 2017-11-13
WANG, YU-WEN
Executed: 2017-11-13
CHEN, RYAN CHIA-JEN
Executed: 2017-11-16
WEI, AN-CHYI
Executed: 2017-11-16
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
NO. 8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK, HSINCHU, 300-78, TAIWAN
Covered Property
(1)
Method for Forming Fin Field Effect Transistor (Finfet) Device Structure
Patent:
10,276,449 →
Application:
15/821,904 →