Patent Assignment
Reel/Frame 044465/0169
Assignment of Assignor's Interest
Recorded: 2017-12-21
Pages: 4
Assignors
WANG, CHAO-HSUN
Executed: 2017-12-05
CHAO, KUO-YI
Executed: 2017-12-05
LIN, RUEIJER
Executed: 2017-12-05
KAO, CHEN-YUAN
Executed: 2017-12-05
WANG, MEI-YUN
Executed: 2017-12-05
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
NO. 8, LI-HSIN ROAD 6, HSINCHU SCIENCE PARK, HSINCHU, 300-78, TAIWAN
Covered Property
(1)
Fin Field Effect Transistor (Finfet) Device Structure with Conductive Layer Between Gate and Gate Contact