Patent Assignment
Reel/Frame 044511/0967
Assignment of Assignor's Interest
Recorded: 2018-01-01
Pages: 12
Assignors
YE, SHAN
Executed: 2017-12-26
CHEN, SHIH-CHENG
Executed: 2017-12-26
LU, TSUO-WEN
Executed: 2017-12-26
SU, TZU-HSIANG
Executed: 2017-12-26
CHUANG, PO-JEN
Executed: 2017-12-26
Assignee
UNITED MICROELECTRONICS CORP.
NO.3, LI-HSIN ROAD 2, SCIENCE-BASED INDUSTRIAL PARK, HSIN-CHU CITY, TAIWAN
Covered Property
(1)
Method of Forming High Dielectric Constant Dielectric Layer by Atomic Layer Deposition
Patent:
10,204,788 →
Application:
15/859,721 →