Patent Assignment
Reel/Frame 045117/0229
Assignment of Assignor's Interest
Recorded: 2018-03-06
Pages: 3
Assignors
KO, CHUNG-TING
Executed: 2018-01-19
LI, JR-HUNG
Executed: 2018-01-09
CHUI, CHI ON
Executed: 2018-01-19
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK, HSINCHU, TAIWAN
Covered Property
(1)
Method of Forming Differential Etch Stop Layer Using Directional Plasma to Activate Surface on Device Structure