IP Library Assignment 045616/0221
Patent Assignment
Reel/Frame 045616/0221

Confirmatory License

Recorded: 2018-03-16 Pages: 2
Assignor
GEORGIA INSTITUTE OF TECHNOLOGY
Executed: 2018-02-26
Assignee
NATIONAL SCIENCE FOUNDATION
2415 EISENHOWER AVENUE, ROOM W 18000, ALEXANDRIA, VIRGINIA, 22314
Covered Property (1)
System and Method for Increasing III-Nitride Semiconductor Growth Rate and Reducing Damaging Ion Flux
Application: 15/738,458 →
Publication: US 2018/0135202
Related Assignments (1)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Jan 29, 2018
From: DOOLITTLE, WILLIAM ALAN; CLINTON, EVAN A.; FABIEN, CHLOE A.M.; GUNNING, BRENDAN PATRICK
To: GEORGIA TECH RESEARCH CORPORATION
Reel/Frame 044757/0785 →