Patent Assignment
Reel/Frame 045774/0721
Assignment of Assignor's Interest
Recorded: 2018-05-10
Pages: 14
Assignors
FUKADA, KEISUKE
Executed: 2017-06-23
ITO, MASAHIKO
Executed: 2017-06-23
KAMATA, ISAHO
Executed: 2017-06-23
TSUCHIDA, HIDEKAZU
Executed: 2017-06-23
UEHIGASHI, HIDEYUKI
Executed: 2017-06-23
FUJIBAYASHI, HIROAKI
Executed: 2017-06-23
NAITO, MASAMI
Executed: 2017-06-23
HARA, KAZUKUNI
Executed: 2017-06-23
KOZAWA, TAKAHIRO
Executed: 2017-06-23
AOKI, HIROFUMI
Executed: 2017-06-23
Assignees
SHOWA DENKO K.K.
13-9, SHIBADAIMON 1-CHOME, MINATO-KU, TOKYO, 105-8518, JAPAN
CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
6-1, OTEMACHI 1-CHOME, CHIYODA-KU, TOKYO, 100-8126, JAPAN
Covered Property
(1)
Method for manufacturing SiC epitaxial wafer by simultaneously utilizing an N-based gas and a Cl-based gas, and SiC epitaxial growth apparatus
Related Assignments
(2)
Other recorded transfers of the patent in this record — the chain of ownership.