Patent Assignment
Reel/Frame 045777/0509
Assignment of Assignor's Interest
Recorded: 2018-05-11
Pages: 3
Assignors
LIN, JYUN-HAO
Executed: 2018-04-20
NIEH, CHUN-FENG
Executed: 2018-04-20
CHANG, HUICHENG
Executed: 2018-04-23
LIN, YU-CHANG
Executed: 2018-04-23
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK, HSINCHU, TAIWAN
Covered Property
(1)
Gradient Doped Region of Recessed Fin Forming a FinFET Device