Patent Assignment
Reel/Frame 046270/0918
Assignment of Assignor's Interest
Recorded: 2018-07-05
Pages: 4
Assignee
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
BÀTIMENT LE PONANT D, 25 RUE LEBLANC, PARIS, 75015, FRANCE
Covered Property
(1)
Forming of a Mos Transistor Based on a Two-Dimensional Semiconductor Material