Patent Assignment
Reel/Frame 048323/0363
Assignment of Assignor's Interest
Recorded: 2019-02-13
Pages: 4
Assignee
SHOWA DENKO K.K.
13-9, SHIBADAIMON 1-CHOME, MINATO-KU, TOKYO, 105-8518, JAPAN
Covered Property
(1)
Method for producing a SiC epitaxial wafer containing a total density of large pit defects and triangular defects of 0.01 defects/cm2 or more and 0.6 defects/cm2 or less
Related Assignments
(2)
Other recorded transfers of the patent in this record — the chain of ownership.