Patent Assignment
Reel/Frame 049397/0743
Assignment of Assignor's Interest
Recorded: 2019-06-06
Pages: 11
Assignors
OMURA, ICHIRO
Executed: 2019-05-13
SATOH, KATSUMI
Executed: 2019-05-15
MATSUDAI, TOMOKO
Executed: 2019-05-30
Assignees
KYUSHU INSTITUTE OF TECHNOLOGY
1-1, SENSUI-CHO, TOBATA-KU, KITAKYUSHU-SHI, FUKUOKA, 804-8550, JAPAN
MITSUBISHI ELECTRIC CORPORATION
7-3, MARUNOUCHI 2-CHOME, CHIYODA-KU, TOKYO, 100-8310, JAPAN
KABUSHIKI KAISHA TOSHIBA
1-1, SHIBAURA 1-CHOME, MINATO-KU, TOKYO, 105-8001, JAPAN
Covered Property
(1)
Insulated Gate Bipolar Transistor Device, Manufacturing Method for Semiconductor Device, and Manufacturing Method for Insulated Gate Bipolar Transistor Device