Patent Assignment
Reel/Frame 049492/0186
Assignment of Assignor's Interest
Recorded: 2019-06-17
Pages: 3
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK, HSINCHU, 300-78, TAIWAN
Covered Property
(1)
Method of Forming a Finfet Device with Gaps in the Source/Drain Region