Patent Assignment
Reel/Frame 049716/0818
Assignment of Assignor's Interest
Recorded: 2019-07-10
Pages: 3
Assignors
LIN, MENG-HAN
Executed: 2019-07-03
HUANG, WEN-TUO
Executed: 2019-06-27
TSAIR, YONG-SHIUAN
Executed: 2019-07-01
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
NO.8, LI-HSIN RD.6, SCIENCE-BASED INDUSTRIAL PARK, HSINCHU, 300, TAIWAN
Covered Property
(1)
Method of Forming a Semiconductor Device with a Dual Gate Dielectric Layer Having Middle Portion Thinner Than the Edge Portions