Patent Assignment
Reel/Frame 050043/0692
Assignment of Assignor's Interest
Recorded: 2019-08-14
Pages: 4
Assignor
SUN, CHAO
Executed: 2019-02-19
Assignee
YANGTZE MEMORY TECHNOLOGIES CO., LTD.
ROOM 7018, NO.18, HUAGUANG BOULEVARD, GUANDONG TECH. INDUSTRIAL PARK, DONGHU DEVELOPMENT AREA, HONGSHAN DISTRICT, WUHAN CITY, HUBEI PROVINCE, CHINA
Covered Property
(1)
High-Voltage Semiconductor Device with Increased Breakdown Voltage