Patent Assignment
Reel/Frame 050601/0015
Assignment of Assignor's Interest
Recorded: 2019-10-02
Pages: 3
Assignor
HSIEH, FU-YUAN
Executed: 2019-09-30
Assignee
NAMI MOS CO., LTD.
NO. 1, LANE 637, ZHONG ZHENG RD., ZHONGHE, NEW TAIPEI CITY, TAIWAN
Covered Property
(1)
Shielded Gate Trench Mosfet with Esd Diode Manufactured Using Two Poly-Silicon Layers Process