IP Library Assignment 050906/0651
Patent Assignment
Reel/Frame 050906/0651

Assignment of Assignor's Interest

Recorded: 2019-11-04 Pages: 4
Assignor
FLASHSILICON INCORPORATION
Executed: 2019-10-31
Assignee
LEWAY INTEGRATED CIRCUIT (SHANGHAI) LIMITED
ROOMS 06, 3RD FLOOR, NO. 1 ZHANGRUN BUILDING, LANE 61, SHENGXIA ROAD, CHINA (SHANGHAI) PILOT FREE TRADE ZONE, CHINA
Covered Properties (2)
Dual Conducting Floating Spacer Metal Oxide Semiconductor Field Effect Transistor (Dcfs Mosfet) and Method to Fabricate the Same
Patent: 8,415,735 →
Application: 12/614,265 →
Publication: US 2011/0108904
Structures and Methods for Reading Out Non-Volatile Memories
Patent: 7,995,398 →
Application: 12/614,280 →
Publication: US 2011/0110162
Related Assignments (5)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Nov 19, 2009
From: WANG, LEE
To: FLASHSILICON, INC.
Reel/Frame 023543/0553 →
Assignment of Assignor's Interest Nov 24, 2009
From: WANG, LEE
To: FLASHSILICON, INC.
Reel/Frame 023563/0322 →
Assignment of Assignor's Interest Dec 20, 2021
From: LEWAY INTEGRATED CIRCUIT (SHANGHAI) LIMITED
To: FLASHSILICON INCORPORATION
Reel/Frame 058426/0515 →
Assignment of Assignor's Interest May 31, 2022
From: FLASHSILICON INCORPORATED
To: SYNERGER INC.
Reel/Frame 060057/0657 →
Assignment of Assignor's Interest Dec 11, 2024
From: FLASHSILICON INCORPORATION
To: SYNERGER INC.
Reel/Frame 069552/0620 →