IP Library Assignment 058426/0515
Patent Assignment
Reel/Frame 058426/0515

Assignment of Assignor's Interest

Recorded: 2021-12-20 Pages: 6
Assignor
Assignee
FLASHSILICON INCORPORATION
1111 RANCHWOOD PLACE, DIAMOND BAR, CALIFORNIA, 91765
Covered Properties (2)
Dual Conducting Floating Spacer Metal Oxide Semiconductor Field Effect Transistor (Dcfs Mosfet) and Method to Fabricate the Same
Patent: 8,415,735 →
Application: 12/614,265 →
Publication: US 2011/0108904
Structures and Methods for Reading Out Non-Volatile Memories
Patent: 7,995,398 →
Application: 12/614,280 →
Publication: US 2011/0110162
Related Assignments (5)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Nov 19, 2009
From: WANG, LEE
To: FLASHSILICON, INC.
Reel/Frame 023543/0553 →
Assignment of Assignor's Interest Nov 24, 2009
From: WANG, LEE
To: FLASHSILICON, INC.
Reel/Frame 023563/0322 →
Assignment of Assignor's Interest Nov 4, 2019
From: FLASHSILICON INCORPORATION
To: LEWAY INTEGRATED CIRCUIT (SHANGHAI) LIMITED
Reel/Frame 050906/0651 →
Assignment of Assignor's Interest May 31, 2022
From: FLASHSILICON INCORPORATED
To: SYNERGER INC.
Reel/Frame 060057/0657 →
Assignment of Assignor's Interest Dec 11, 2024
From: FLASHSILICON INCORPORATION
To: SYNERGER INC.
Reel/Frame 069552/0620 →