Patent Assignment
Reel/Frame 051199/0001
Assignment of Assignor's Interest
Recorded: 2019-12-06
Pages: 6
Assignors
YUN, KYUNGHWA
Executed: 2019-09-30
KIM, CHANHO
Executed: 2019-09-30
KWAK, PANSUK
Executed: 2019-09-30
Assignee
SAMSUNG ELECTRONICS CO., LTD.
129, SAMSUNG-RO,, YEONGTONG-GU, SUWON-SI, GYEONGGI-DO, 16677, KOREA, REPUBLIC OF
Covered Property
(1)
Non-Volatile Memory Device Including Vertical Pass Transistors Having a Greater Width in an Area Between a Gate and a Word Line Than a Width of a Channel Structure in an Area Between a Ground Select Line and the Word Line.