Patent Assignment
Reel/Frame 051263/0278
Assignment of Assignor's Interest
Recorded: 2019-12-12
Pages: 4
Assignee
SAMSUNG ELECTRONICS CO., LTD.
129, SAMSUNG-RO, YEONGTONG-GU, SUWON-SI, GYEONGGI-DO, 16677, KOREA, REPUBLIC OF
Covered Property
(1)
Ion Depth Profile Control Method, Ion Implantation Method and Semiconductor Device Manufacturing Method Based on the Control Method, and Ion Implantation System Adapting the Control Method