IP Library Assignment 051383/0740
Patent Assignment
Reel/Frame 051383/0740

Assignment of Assignor's Interest

Recorded: 2019-12-30 Pages: 3
Assignors
CHIANG, KUO-CHENG
Executed: 2019-09-18
HSU, TING-HUNG
Executed: 2019-09-18
WANG, CHAO-HSIUNG
Executed: 2019-09-18
LIU, CHI-WEN
Executed: 2019-09-18
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK, HSINCHU, 300-78, TAIWAN
Covered Properties (3)
Fin Spacer Protected Source and Drain Regions in FinFETs
Patent: 9,147,682 →
Application: 14/056,649 →
Publication: US 2015/0108544
Fin Spacer Protected Source and Drain Regions in FinFETs
Patent: 9,935,011 →
Application: 14/851,535 →
Publication: US 2016/0005656
Fin Spacer Protected Source and Drain Regions in FinFETs
Application: 15/911,488 →
Publication: US 2018/0197782
Related Assignments (1)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Oct 17, 2013
From: CHING, KUO-CHENG; HSU, TING-HUNG; WANG, CHAO-HSIUNG; LIU, CHI-WEN
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 031428/0250 →