Patent Assignment
Reel/Frame 051571/0884
Assignment of Assignor's Interest
Recorded: 2020-01-21
Pages: 7
Assignors
TORABI, ABBAS
Executed: 2020-01-15
SCHULTZ, BRIAN D.
Executed: 2020-01-06
LOGAN, JOHN
Executed: 2020-01-06
Assignee
RAYTHEON COMPANY
870 WINTER STREET, WALTHAM, MASSACHUSETTS, 02451-1449
Covered Property
(1)
Gallium Nitride High Electron Mobility Transistors (HEMTs) Having Reduced Current Collapse And Power Added Efficiency Enhancement