Assignment of Assignor's Interest

Recorded: 2020-05-18 Pages: 20

Assignor

HEADWAY TECHNOLOGIES, INC.

Executed: 2019-02-04

Assignee

8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK, HSINCHU, 300-78, TAIWAN

Covered Property (1)

Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresistive Random Access Memory (MRAM)

Patent: 11,417,835 →

Application: 16/877,066 →

Publication: US 2020/0279993

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.