Patent Assignment
Reel/Frame 052743/0629
Assignment of Assignor's Interest
Recorded: 2020-05-25
Pages: 5
Assignors
CHIANG, HUNG-LI
Executed: 2020-05-05
CHENG, CHAO-CHING
Executed: 2020-05-05
CHANG, CHIH-SHENG
Executed: 2020-05-06
CHEN, TZU-CHIANG
Executed: 2020-05-05
CAI, JIN
Executed: 2020-05-06
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
NO.8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK,, HSINCHU, 300-78, TAIWAN
Covered Property
(1)
Memory Device and Multi-Level Memory Cell Having Ferroelectric Storage Element and Magneto-Resistive Storage Element
Patent:
11,145,676 →
Application:
16/880,998 →